MOSFET Cross-Reference Search 12N60 Datasheet (PDF) 1.1. Size:284K fairchildsemi September 2010 UniFET-II TM FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET? 600V, 12A, 0.65? Features Description RDS(on) = 0.53?
( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 26nC) DOMS technology. Low Crss ( Typ. 12pF) This advance technology has been esp 1.2. Size:1170K fairchildsemi September 2007 ® QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65?
@VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especially tailored to 1.3.
Size:1701K fairchildsemi March 2014 FQP12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect. 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has. Low Gate Charge (Typ. 48 nC) been especially tailored to 1.4. Size:173K fairchildsemi HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode 100kHz Operation. 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation.
Daftar Persamaan Transistor
390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching 600V Swit 1.5. Size:207K fairchildsemi HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and 100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the hi 1.6. Size:549K fairchildsemi April 2000 TM QFET QFET QFET QFET FQPF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 600V, RDS(on) = 0.7? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially t 1.7.
Size:120K fairchildsemi HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device has the high i 1.8. Size:169K fairchildsemi HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. 230ns at TJ = 15 1.9.
Size:151K fairchildsemi HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC. 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device ha 1.10. Size:1123K fairchildsemi November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect. 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology.
This advanced technology has. Low Gate Charge (Typ. 48 nC) been especially tailored 1.11. Size:375K utc UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior 1.12. Size:106K harrissemi S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package 24A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage switching device 1.13.
![]() Persamaan Transistor Fet K7a65d
Size:188K harrissemi HGTP12N60C3, HGT1S12N60C3, S E M I C O N D U C T O R HGT1S12N60C3S August 1995 24A, 600V, UFS Series N-Channel IGBT Features Packages JEDEC TO-220AB EMITTER 24A, 600V at TC = +25oC COLLECTOR GATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oC COLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss JEDEC TO-262AA Description EMITTER COLLECTOR 1.14. Size:102K harrissemi S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package 24A, 600V at TC = 25oC JEDEC STYLE TO-247 Typical Fall Time.
Huawei Ascend G610-U20 (100% Tested ) Factory Flash File Free Download Huawei Ascend G610-U20 -Android Official Firmware Free Download Without Password Huawei Ascend G610-U20, 100%Tested CS-Tool Flash File Free Download Huawei Ascend G610-U20 Factory file, Full Tested File Huawei Ascend G610-U20 official Factory file 100% tested. Huawei Ascend G610-U20 Flash File 100% tested download now Huawei Ascend G610-U20, Stock Rom Firmware Download. Huawei Ascend G610-U20 Dead boot Recovery Firmware Flash File Download by-CS-Tools. Huawei g610 u20 android 4.2 1 official firmware.
210ns at TJ = 150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high 1.15. Size:46K harrissemi S E M I C O N D U C T O R HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 12A, 600V Latch Free Operation EMITTER COLLECTOR Typical Fall Time.
Fet Transistor Operation
PART NUMBER REPLACE PART PRODUCT SUMMARY CASE PINOUT PNP Silicon =MMBT 404A =MMBT 404A MOS FET Channel N =MMFT 2N02EL =MMFT 2N02EL NPN Germanium AC 127, ASY 28.29, 2SD30 25V, 5mA, 0,025W NPN Germanium - 40V, 0,15W, 7MHz PNP Germanium AF 124.127, AF 200 35V, 0,12W, PNP Germanium AF 124.127, AF 200 35V, 0,12W, NPN Silicon BC 168, BC 183, BC 238, BC 548 15V, 0,025A, 0,15W, B20 NPN Silicon BC 168, BC 183, BC 238, BC 548 =2N1005, B45 PNP Germanium AD 149, AUY 19.20, 2N1529.48 40V, 3A, 30W PNP Germanium AC 125.126, AC 151, 2N1191.94 20V, 0,3A, 0,2W.
All Transistors. Cross Reference Search BJT TOP50: MOSFET TOP30: IGBT TOP15: Choosing Bipolar Transistor Replacements Material = Struct = Pc W Vcb V Vce V Veb V Ic A Tj C Ft MHz Cc Caps = R1 = kOhm R2 = kOhm R1/R2 = Empty or zero fields are ignored during the search! TOTAL: 105274 transistors.
Comments are closed.
|
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |